Modeling and Simulation of Flexible Oxide Thin Film Transistors
نویسندگان
چکیده
Electrical characteristic of amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) on flexible substrate are investigated with various channel width and length. Its electrical properties according to the physical dimension of the channel are analyzed through Technology Computer-Aided Design (TCAD) simulation. Index Terms — Density of states (DOS), flexible, In-GaZn-O (IGZO), modeling, thin-film transistors (TFTs).
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